1 publication date: december 2003 sjj00174bed composite transistors XP0421M silicon npn epitaxial planar type for switching/digital circuits features ? two elements incorporated into one package (transistors with built-in resistor) ? reduction of the mounting area and assembly cost by one half basic part number ? unr221m (un221m) 2 absolute maximum ratings t a = 25 c internal connection marking symbol: fh electrical characteristics t a = 25 c 3 c parameter symbol rating unit collector-base voltage (emitter open) v cbo 50 v collector-emitter voltage (base open) v ceo 50 v collector current i c 100 ma total power dissipation p t 150 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 4 tr1 tr2 5 6 1 3 2 unit: mm 1: emitter (tr1) 4: emitter (tr2) 2: base (tr1) 5: base (tr2) 3: collector (tr2) 6: collector (tr1) eiaj : sc-88 smini6-g1 package 5? 10? 2.1 0.1 1.25 0.10 1 3 2 0.2 0.05 0.12 +0.05 ?.02 0.2 0.1 (0.425) 1.3 0.1 2.0 0.1 0 to 0.1 0.9 0.1 0.9 +0.2 ?.1 6 5 4 (0.65) (0.65) parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 a, i e = 050v collector-emitter voltage (base open) v ceo i c = 2 ma, i b = 050v collector-base cutoff current (emitter open) i cbo v cb = 50 v, i e = 0 0.1 a collector-emitter cutoff current (base open) i ceo v ce = 50 v, i b = 0 0.5 a emitter-base cutoff current (collector open) i ebo v eb = 6 v, i c = 0 0.2 ma forward current transfer ratio h fe v ce = 10 v, i c = 5 ma 80 ? collector-emitter saturation voltage v ce(sat) i c = 10 ma, i b = 0.3 ma 0.25 v output voltage high-level v oh v cc = 5 v, v b = 0.5 v, r l = 1 k ? 4.9 v output voltage low-level v ol v cc = 5 v, v b = 2.5 v, r l = 1 k ? 0.2 v input resistance r 1 ? 30% 2.2 + 30% k ? resistance ratio r 1 / r 2 0.047 ? transition frequency f t v cb = 10 v, i e = ? 2 ma, f = 200 mhz 150 mhz
XP0421M 2 sjj00174bed h fe ? i c c ob ? v cb i o ? v in p t ? t a i c ? v ce v ce(sat) ? i c v in ? i o 0 160 40 120 80 0 250 100 200 50 150 total power dissipation p t ( mw ) ambient temperature t a ( c ) 0 012 210 48 6 140 120 100 80 60 40 20 i b = 1.0 ma 0.2 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma 0.1 ma collector-emitter voltage v ce (v) collector current i c (ma) 0.01 0.1 1 1 10 100 i c / i b = 10 0.1 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) 0 1 10 100 100 200 300 400 1 000 v ce = 10 v 25 c ? 25 c t a = 75 c forward current transfer ratio h fe collector current i c (ma) 1 0 102030 10 40 f = 1 mhz t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) 012 v o = 5 v t a = 25 c 1 10 100 1 000 output current i o (ma) input voltage v in (v) 0.1 0.1 100 1 10 100 v o = 0.2 v t a = 25 c 1 10 input voltage v in (v) output current i o (ma)
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